Manufacturing method of interconnection layer for semiconductor device

A method of manufacturing an interconnection layer for a semiconductor device comprising the steps of:

• forming a conductive pattern in a surface of a semiconductor substrate or on the surface of the semiconductor substrate;
• forming an insulation layer on an upper surface of the conductive pattern;
• forming at least one groove having sidewalls and a bottom in the insulation layer exposing upper surfaces of the conductive pattern;
• forming a first barrier layer on an upper surface of the insulation layer and on the sidewalls and bottom of the at least one groove;
• selectively forming a seed layer directly on and in contact with portions of a surface of the first barrier layer and the sidewalls and the bottom of the at least one groove;
• selectively forming a copper interconnection layer on the first barrier layer and the seed layer;
• and
• forming a second barrier layer on the copper interconnection layer.