Structure for contact formation using a silicon-germanium alloy
AssigneeMicron Technology, Inc.
InventorRandhir P. S. Thakur
Life of this patent
Estimating the term…
Abstract
A new method and structure for improved contact using doped silicon is provided. The structures are integrated to several higher level embodiments. The improved contact has low contact resistivity. Improved junctions are thus provided between an IGFET device and substuent metallization layers. The improvements are obtained through the use of a silicon-germanium (Si—Ge) alloy. The alloy can be formed from depositing germanium onto the substrate and subsequently annealing the contact or by selectively depositing the preformed alloy into a contact opening. The above advantages are incorporated with relatively few process steps.
Claims21
A method for forming a semiconductor contact comprising:
- forming a contact opening in a dielectric layer on a semiconductor substrate;
- depositing a first contact material on the semiconductor substrate, and within the contact opening in the dielectric layer;
- depositing a barrier metal on the first contact material;
- annealing the contact;
- depositing a second contact material on the barrier metal;
- and
- depositing a third contact material on the second contact material.
A method for forming a semiconductor contact comprising:
- forming a contact opening in a dielectric layer on a semiconductor substrate;
- depositing a first contact material on the semiconductor substrate, and within the contact opening in the dielectric layer;
- depositing a barrier metal on the first contact material comprising:
- depositing a layer of titanium (Ti);
- and
- depositing a layer of titanium nitride (TiN) on the layer of titanium (Ti)
- annealing the contact;
- depositing a second contact material on the barrier metal;
- and
- depositing a third contract material on the second contract material.
A method for forming a semiconductor contact comprising:
- forming a contact opening in a dielectric layer on a semiconductor substrate;
- depositing a first contact material on the semiconductor substrate, and within the contact opening in the dielectric layer;
- depositing a barrier metal on the first contact material;
- annealing the contact;
- depositing a second contact material on the barrier metal;
- and
- depositing a aluminum (Al) on the second contract material.
A method for forming a semiconductor contact comprising:
- forming a contact opening in a dielectric layer on a semiconductor substrate;
- forming an alloy material on the semiconductor substrate and within the contact opening in the dielectric layer;
- depositing a barrier metal on the alloy material;
- depositing a first contact material on the barrier metal;
- and
- depositing a second contact material on the first contact material.
A method for forming a semiconductor contact comprising:
- forming a contact opening in a dielectric layer on a semiconductor substrate;
- forming an oxide layer on the semiconductor substrate and within the contact opening in the dielectric layer;
- removing a portion of the oxide layer that is over the semiconductor substrate;
- and
- forming an alloy material on the semiconductor substrate and adjoining a remaining portion of the oxide layer.
A method for forming a semiconductor contact comprising:
- forming a contact opening in a dielectric layer on a semiconductor substrate;
- forming an oxide layer on the semiconductor substrate and within the contact opening in the dielectric layer;
- removing a portion of the oxide layer that is over the semiconductor substrate;
- and
- forming an alloy material on the semiconductor substrate and adjoining a remaining portion of the oxide layer, the alloy material comprising silicon and geranium.
A method for forming a semiconductor contact comprising:
- forming a contact opening in a dielectric layer on a semiconductor substrate;
- forming an oxide layer on the semiconductor substrate and within the contact opening in the dielectric layer;
- removing a portion of the oxide layer that is over the semiconductor substrate;
- implanting a germanium (Ge) contact in the semiconductor substrate;
- and
- annealing the contact.
Dependencies are inferred from the claim text.