Method of making devices having thin dielectric layers
AssigneeAgere Systems Guardian Corp.
InventorsThomas Boone, Joseph Mark Rosamilia
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Abstract
A method for making a thin dielectric layer is disclosed which is useful in fabricating semiconductor devices, particularly transistors and DRAM cell devices. The method comprises a two-steps, i.e., (i) growing a base layer of dielectric material on a substrate having a thickness in excess of the desired thickness for the layer, and (ii) etching back the base layer to the desired thickness. With these two steps, a thin dielectric layer of less than 20 Å may be provided having substantial uniformity across its surface with a standard deviation in surface contours of less than 0.7 Å.
Claims11
A method for growing a thin-film dielectric layer of a desired thickness of 20 Å or less on a substrate, comprising (a) growing a base layer consisting essentially of silicon oxide dielectric material on the substrate wherein the base layer has a thickness exceeding the desired thickness, and (b) etching back the base layer to the desired thickness of 20 Å or less.
A method of making a thin-film dielectric layer of a desired thickness on a substrate for use in fabricating a semiconductor device, the method comprising:
- providing the substrate;
- growing a base layer consisting essentially of silicon oxide dielectric material on the substrate wherein the base layer has a thickness exceeding the desired thickness, and
- etching back the base layer to the desired thickness, whereby a dielectric layer having a thickness of less than 20 Å is provided having substantial uniformity across its surface with a standard deviation in surface contours of less than 7 Å without performing a post-etching anneal.
A method of making a thin-film dielectric layer of a desired thickness on a substrate for use in fabricating a semiconductor device, the method comprising:
- providing a silicon substrate;
- growing a base layer of dielectric material on the substrate wherein the base layer has a thickness exceeding the desired thickness, and
- etching back the base layer to the desired thickness, whereby a dielectric layer having a thickness of less than 20 Å is provided.
Dependencies are inferred from the claim text.