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AssigneeHonda Giken Kogyo Kabushiki Kaisha
InventorYamato Ishikawa
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A high electron mobility transistor includes a channel layer for developing therein an electron gas layer having a substantially uniform electron gas density, and upper and lower high-resistance wide-band gap layers disposed respective over and beneath the channel layer, each of the upper and lower high-resistance wide-band gap layers having a silicon-doped planar layer disposed therein. A contact layer is disposed on the upper wide-band gap layer for contact with source and drain electrodes, the contact layer having a recess defined therein which divides the contact tact layer. A gate electrode of substantially T-shaped cross section is disposed in the recess, and a passivation film is disposed on an inner wall surface of the recess and a lower leg portion of the gate electrode, exposing an upper head portion of the gate electrode.
A method of manufacturing a field-effect transistor, comprising:
A method of manufacturing a field-effect transistor, comprising the steps of:
A method of manufacturing a high electron mobility transistor, comprising the steps of:
Dependencies are inferred from the claim text.