Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device comprising steps of:

• introducing catalytic elements into a semiconductor film of low crystallinity;
• applying first heat treatment to said semiconductor film to form a crystalline semiconductor film;
• applying second heat treatment to said crystalline semiconductor film to enhance its crystallinity after said first heat treatment;
• irradiating said crystalline semiconductor film of enhanced crystallinity with a laser light or an intense light;
• adding a group XV element to said crystalline semiconductor film after said irradiating;
• and
• applying third heat treatment to said crystalline semiconductor film of enhanced crystallinity to have said catalytic elements absorbed in said region added with group XV elements.

A method of manufacturing a semiconductor device comprising steps of:

• introducing catalytic elements into a semiconductor film of low crystallinity;
• applying first heat treatment to said semiconductor film to form a crystalline semiconductor film including an amorphous portion;
• applying second heat treatment to said crystalline semiconductor film to enhance its crystallinity;
• irradiating said crystalline semiconductor film of enhanced crystallinity with a laser light or an intense light;
• adding a group XV element to said crystalline semiconductor film after said irradiating;
• and
• applying third heat treatment to said crystalline semiconductor film of enhanced crystallinity to have said catalytic elements absorbed in said region added with group XV elements.

A method of manufacturing a semiconductor device comprising steps of:

• introducing catalytic elements into a semiconductor film of low crystallinity;
• applying first heat treatment to said semiconductor film to form a crystalline semiconductor film;
• applying second heat treatment to said crystalline semiconductor film to enhance its crystallinity;
• irradiating said crystalline semiconductor film of enhanced crystallinity with a laser light or an intense light;
• selectively adding a group XV element to said crystalline semiconductor film after said irradiating;
• and
• applying third heat treatment to said crystalline semiconductor film of enhanced crystallinity to have said catalytic elements absorbed in said region added with group XV elements.