Semiconductor substrate, light-emitting device, and method for producing the same

A method for producing a semiconductor substrate, comprising the steps of:

• forming an n-th patterned mask containing a material having a growth suppressing effect on or above a lower substrate, wherein n is an integer of 1 or more;
• growing a nitride semiconductor crystal on or above the lower substrate via the n-th patterned mask to form an n-th nitride semiconductor crystal layer;
• forming an (n+1)-th patterned mask containing a material having a growth suppressing effect on or above the lower substrate, the (n+1)-th patterned mask at least having a surface which is positioned at a level different from a level of a surface of the n-th patterned mask, with respect to a surface of the lower substrate;
• and
• growing a nitride semiconductor crystal on or above the lower substrate via the (n+1)-th patterned mask to form an (n+1)-th nitride semiconductor crystal layer.

A method for producing a semiconductor substrate, comprising the steps of:

• forming a first patterned mask containing a material having a growth suppressing effect on a lower substrate;
• growing a semiconductor crystal on the lower substrate via the first patterned mask to form a first semiconductor crystal layer;
• forming a second patterned mask containing a material having a growth suppressing effect on or above the lower substrate, the second patterned mask at least having a surface which is positioned at a level different from a level of a surface of the first patterned mask, with respect to a surface of the lower substrate;
• and
• growing a semiconductor crystal on or above the lower substrate via the second patterned mask to form a second semiconductor crystal layer,
• wherein the second patterned mask is formed in a position with respect to a position of the first patterned mask so that the second semiconductor crystal layer has a lower defect density than the first semiconductor crystal layer.

A method for producing a semiconductor substrate, comprising the steps of:

• forming an n-th patterned mask containing a material having a growth suppressing effect on or above a lower substrate, wherein n is an integer of 1 or more;
• growing a semiconductor crystal on or above the lower substrate via the n-th patterned mask to form an n-th semiconductor crystal layer;
• forming an (n+1)-th patterned mask at least having a surface which is positioned at a level different from a level of a surface of the n-th patterned mask, with respect to a surface of the lower substrate;
• and
• growing a semiconductor crystal on or above the lower substrate via the (n+1)-th patterned mask to form an (n+1)-th semiconductor crystal layer;
• whereby the (n+1)-th patterned mask is formed in a position with respect to a position of the n-th patterned mask so that the (n+1)-th semiconductor crystal layer has a lower defect density than the n-th semiconductor crystal layer.