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US 6,294,430 B1Granted
Nitridization of the pre-ddi screen oxide
AssigneeAdvanced Micro Devices, Inc.
InventorsRichard Fastow, Sameer S. Haddad, Daniel Sobek
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Abstract
A flash memory device and a method of manufacturing the flash memory device having high reliability in which a gate stack is formed on a tunnel oxide formed on a substrate and a layer of oxide is formed on the surfaces of the gate stack and exposed surfaces of the substrate. Nitrogen is diffused into the layer of oxide.
Claims10
A method of manufacturing a flash memory device having increased reliability, wherein the method comprises:
- (a) forming a gate stack on a substrate wherein the gate stack includes a tunnel oxide formed on the substrate, a floating gate formed on the tunnel oxide, a layer of dielectric formed on the floating gate and a control gate formed on the layer of dielectric;
- (b) forming a layer of oxide on the gate stack and exposed portions of the substrate;
- and
- (c) diffusing nitrogen into the layer of oxide formed on the gate stack and exposed portions of the substrate.
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A flash memory device having increased reliability, comprising:
- a gate stack formed on a substrate wherein the gate stack includes a tunnel oxide formed on the substrate, a floating gate formed on the tunnel oxide, a layer of dielectric formed on the floating gate and a control gate formed on the layer of dielectric;
- a layer of oxide formed on surfaces of the gate stack and exposed surfaces of the substrate;
- and
- nitrogen diffused into the layer of oxide.
1 more element
Dependencies are inferred from the claim text.