Monitoring barrier metal deposition for metal interconnect
AssigneesAdvanced Micro Devices, Inc., Applied Materials, Inc.
InventorsTakeshi Nogami, Susan Chen, Imran Hashim
Life of this patent
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Abstract
The barrier effectiveness of a barrier material with respect to a conductive material is evaluated by providing a silicon substrate and then etching said silicon substrate to define an opening therein. The barrier material is then deposited in the opening, followed by a deposition of the conductive material. The silicon substrate is then heated at a predetermined temperature, and reactions between the conductive material and the silicon substrate are detected using a SEM or an optical microscope.
Claims30
A method for evaluating the barrier effectiveness of a barrier material with respect to a conductive material, comprising the steps of:
- providing a silicon substrate;
- etching said silicon substrate to define an opening therein;
- depositing said barrier material in said opening;
- depositing said conductive material in said opening after depositing said barrier material therein;
- heating said silicon substrate at a temperature;
- and
- detecting reactions between said conductive material and said silicon substrate.
A method for evaluating the barrier effectiveness of a barrier material with respect to a conductive material, comprising the steps of:
- providing a silicon substrate;
- etching said silicon substrate to define an opening therein;
- depositing said barrier material in said opening;
- depositing said conductive material in said opening after depositing said barrier material therein;
- heating said silicon substrate at a temperature;
- removing said conductive material and said barrier material from said silicon substrate;
- and
- analyzing said silicon substrate using a scanning electronic microscope or an optical microscope to identify the presence of at least one silicon-containing compound that is formed as a result of reactions between said conductive material and said silicon substrate.
A method for evaluating the barrier effectiveness of a barrier material with respect to a conductive material, comprising the steps of:
- providing a silicon substrate;
- etching said silicon substrate to define an opening therein;
- depositing said barrier material in said opening;
- depositing said conductive material in said opening after depositing said barrier material therein;
- heating said silicon substrate for about one hour at about 250° C. to about 500° C.;
- removing said conductive material and said barrier material from said silicon substrate;
- etching said silicon substrates using Secco etch or Wright etch;
- and
- analyzing said silicon substrate using a scanning electronic microscope or an optical microscope to identify the presence of at least one silicon-containing compound that is formed as a result of reactions between said conductive material and said silicon substrate.
Dependencies are inferred from the claim text.