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AssigneeKYOCERA Corporation
InventorsToshihiro Iwaida, Teruhisa Makino, Masanobu Ishida, Tomohide Hasegawa, Hirosi Okayama
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A wiring board of the present invention is equipped with an insulating board formed of a sintered product of silicon nitride containing a silicon nitride crystal phase, and a metal circuit formed on said insulating board, wherein said sintered product of silicon nitride contains a rare earth element (RE) and magnesium in a total amount of from 4 to 30 mol % calculated as oxides and at a molar ratio (RE2O3/MgO) calculated as oxides of from 0.1 to 15, and has a relative density of not smaller than 90% and a heat conductivity of not smaller than 50 W/m·K. The wiring board is equipped with the insulating board having very excellent heat-radiating property and a large strength, and is very useful as a wiring board for, for example, power modules.
A wiring board equipped with an insulating board formed of a sintered product of silicon nitride containing a silicon nitride crystal phase, and a metal circuit formed on said insulating board, wherein said sintered product of silicon nitride contains a rare earth element (RE) and magnesium in a total amount of from 4 to 30 mol % calculated as oxides and at a molar ratio (RE2O3/MgO) calculated as oxides of from 0.1 to 15, and has a relative density of not smaller than 90% and a heat conductivity of not smaller than 50 W/m·K.
A wiring board equipped with an insulating board formed of a sintered product of silicon nitride containing a silicon nitride crystal phase fired at a temperature less than 1800° C., and a metal circuit formed on said insulating board, wherein said sintered product of silicon nitride contains a rare earth element (RE) and magnesium in a total amount of from 4 to 30 mol % calculated as oxides and at a molar ratio (RE2O3/MgO) calculated as oxides of from 0.1 to 15, has a relative density of not smaller than 90%, and a heat conductivity of not smaller than 50 W/m·K.
A wiring board equipped with an insulating board formed of a sintered product of silicon nitride containing a silicon nitride crystal phase and a metal circuit formed on said insulating board, wherein said sintered product of silicon nitride contains a rare earth element (RE) and magnesium in a total amount of from 4 to 30 mol % calculated as oxides at a molar ratio (RE2O3/MgO) calculated as oxides of from 0.1 to 15, has a relative density of not smaller than 90%, and a heat conductivity of not smaller than 50 W/m·K, and wherein said crystals of silicon nitride are columnar with an average long-axis diameter of from 0.5 to 3 μm.
Dependencies are inferred from the claim text.