Method for manufacturing p-type GaN based thin film using nitridation

A method for manufacturing a high conductivity p-type GaN-based III-nitride thin film, comprising the steps of:

• growing a GaN-based epitaxial layer while doping the epitaxial layer with magnesium with hydrogen serving as a carrier gas by the use of a metalorganic chemical vapor deposition system;
• subjecting the grown layer to nitridation and RTA (rapid thermal annealing) in combination, wherein the nitridation is carried out at 10-1,100° C. for 1-120 min under 10 Torr or less, using nitrogen plasma with a nitrogen flow of 1-4,000 sccm.

A method for manufacturing a high conductivity p-type GaN-based III-nitride thin film, comprising the steps of:

• growing a GaN-based epitaxial layer while doping the epitaxial layer with magnesium with hydrogen serving as a carrier gas by the use of a metalorganic chemical vapor deposition system;
• subjecting the grown layer to nitridation and RTA (rapid thermal annealing) in combination,
• further comprising the step of immersing the p-type GaN-based III-nitride thin film in a mix solution of hydrochloric acid and nitric acid to remove native oxides prior to depositing a p-type electrode, said native oxides being formed, in abundance, on a surface of the thin film.