Method of jointly forming stacked capacitors and antifuses, method of blowing antifuses, and antifuses and stacked capacitors constituting a part of integrated circuitry

An antifuse comprising:

• an inner antifuse plate;
• an outer antifuse plate;
• an intervening antifuse dielectric element disposed between the inner and outer plates and comprising an oxide-nitride-oxide composite;
• and
• an antifuse breakdown layer disposed over the outer plate and at least a portion of the intervening antifuse dielectric element.

An antifuse assembly comprising:

• a first antifuse plate;
• a second antifuse plate in spaced relation to said first antifuse plate;
• a first dielectric between said first and second antifuse plates;
• to a second dielectric in electrical contact with said first and second antifuse plates, said second dielectric having a lower breakdown voltage than said first dielectric, said first and second antifuse plates eaching having an edge not in contact with said first dielectric, and wherein said edges are in contact with said second dielectric.

An antifuse assembly comprising:

• a first antifuse plate;
• a second antifuse plate in spaced relation to said first antifuse plate;
• a first dielectric between said first and second antifuse plates;
• a second dielectric in electrical contact with said first and second antifuse plates, said second dielectric having a lower breakdown voltage than said first dielectric, said first and second antifuse plates each having an edge not in contact with said first dielectric, wherein said second dielectric extends in part between said first and second antifuse plates.

An antifuse comprising:

• an inner antifuse member having an upper surface and a lateral edge joined therewith;
• an outer antifuse plate having a lateral edge;
• and
• an intervening antifuse dielectric element separating and electrically isolating the inner and outer antifuse plates from one another, the intervening antifuse dielectric element having first and second regions laterally spaced relative to one another, at least a portion of the intervening antifuse dielectric element being disposed over the entire inner antifuse plate upper surface, the first lateral region having a first breakdown voltage per unit length value for a given current per unit area, the second lateral region having a second breakdown voltage per unit length value for the same given current per same unit area which is lower than said first breakdown voltage per unit length value, the second lateral region defining a blowable path which upon application of an effective voltage will conductively short the inner and the outer antifuse plates together through the path but not through the first lateral region,
• wherein the first lateral region comprises an oxide-nitride-oxide composite, the dielectric material of the second lateral region comprising SiO2 deposited by decomposition of TEOS.