Semiconductor integrated circuit device

A semiconductor integrated circuit device comprising:

• a first power supply line receiving a first potential;
• a second power supply line receiving a second potential less than the first potential;
• a third power supply line receiving a third potential greater than the first potential;
• a first p-channel MOSFET capable of connecting said first power supply line with a first node;
• a second p-channel MOSFET capable of connecting said first power supply line with a second node;
• a third p-channel MOSFET capable of connecting said second node with said third power supply;
• a first voltage drop circuit connected between said second node and said first power supply line;
• a sequential circuit connected between said first node and said second power supply line, and comprised of a plurality of p-channel MOSFETs and a plurality of n-channel MOSFETS, each of said plurality of p-channel MOSFETs having a substrate terminal connected to said first node.

A semiconductor integrated circuit device comprising:

• a first power supply line connected to a first node;
• a second power supply line;
• a first p-channel MOSFET connected between the first node and said second power supply line, for applying a first potential to said second power supply line;
• a logic circuit connected to said second power supply line, said logic circuit running from said first potential on said second power supply line and including a second p-channel MOSFET having a substrate electrode connected to said first power supply line;
• and
• a voltage generating circuit connected between said first and second power supply lines, for generating a second potential less than a potential on said first power supply line, and for applying the second potential to said second power supply line when said first p-channel MOSFET is brought out of conduction. said voltage generating circuit including a plurality of MOSFETs connected in series. each of them having a drain and a gate connected to each other, and at least one of them having a threshold voltage whose absolute value is different from that of the remainder.

A semiconductor integrated circuit device comprising:

• a first power supply line connected to a first node receiving a first potential;
• a second power supply line;
• a first p-channel MOSFET connected between the first node and said second power supply line, said first power supply line having the first potential when said first p-channel MOSFET is brought into conduction, and said first power supply line having a second potential greater than the first potential when said first p-channel MOSFET is brought out of conduction;
• a logic circuit connected to said second power supply line, said logic circuit performing a prescribed operation and including a second p-channel MOSFET having a substrate electrode connected to said first power supply line;
• and
• a voltage generating circuit connected between said first and second power supply lines, for generating a third potential less than the second potential, and for applying the third potential to said second power supply line when said first p-channel MOSFET is brought out of conduction.

A semiconductor integrated circuit device comprising:

• a first power supply line;
• a second power supply line;
• a third power supply line;
• a first switch element connected to said second power supply line, for providing said second power supply line with a first potential when said first switch element is conductive;
• a function circuit operative with said first potential and a second potential different from the first potential received from said second and third power supply lines, respectively, when said first switch element is conductive, said function circuit including a field effect transistor having a substrate electrode connected to said first power supply line;
• and
• a potential generating circuit connected to said first and second power supply lines, for a potential difference between said first and second power supply lines when said first switch element is non-conductive, wherein
• said first potential is applied to said first power supply line when said first switch element is conductive and a third potential different from said first potential is applied to said first power supply line when said first switch element is non-conductive.