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US 6,285,069 B1Granted
Semiconductor device having improved parasitic capacitance and mechanical strength
AssigneeNEC Corporation
InventorHiroshi Yoshida
Life of this patent
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Abstract
A cavity structure formed in a semiconductor substrate and under a device formation region on which a device is formed. The cavity structure has supporting pillars providing the device formation region with mechanical strength.
Claims18
A cavity structure in a semiconductor substrate under a device formation region on which a device is formed, the cavity structure including a continuous cavity in the substrate and plural separate supporting pillars in said cavity that each have a generally symmetrical cross section in plan view and that provide the device formation region with mechanical strength.
A semiconductor device comprising:
- a substrate;
- a device formation region on said substrate;
- a continuous hollow cavity in said substrate beneath an entirety of said device formation region, said hollow cavity separating said device formation region from said substrate;
- and
- plural separate pillars in said hollow cavity that each has a generally symmetrical cross section in plan view and extends from a bottom of said cavity to a top thereof and mechanically supports said device formation region.
2 more elements
Dependencies are inferred from the claim text.