Method for improving CMP processing
AssigneeMicron Technology, Inc.
InventorTrung T. Doan
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Abstract
The invention also relates to an a method of fabrication of an integrated circuit, the method includes altering a portion of a surface layer of a material to be polished and polishing the surface layer in a chemical mechanical polishing process. Preferably, the step of altering of the present invention includes adding an impurity to the material such as a dopant by heavy ion implantation at a concentration level of about 1×1010 ions/cm2 to about 1×1018 ions/cm2.
Claims34
A method of fabrication of an integrated circuit, said method comprising the steps of:
- providing a semiconductor wafer having a surface layer of a material to be planarized in a chemical polishing process:
- altering a portion of said surface layer of material to damage said surface layer by implanting said surface layer with a material selected from the group consisting of argon, arsenic, oxygen, fluorine and chlorine;
- and
- polishing said altered surface layer in said chemical mechanical polishing process.
A method of fabrication of an integrated circuit, said method comprising the steps of:
- providing a semiconductor wafer having a surface layer of a material to be planarized in a chemical mechanical polishing process;
- masking at least a portion of said surface layer of material;
- altering said unmasked portion of said surface layer of material to damage said surface layer by implanting said surface layer with a material selected from the group consisting of argon, arsenic, oxygen, fluorine and chlorine;
- removing said mask;
- and
- polishing said roughened surface layer in said chemical mechanical polishing process.
Dependencies are inferred from the claim text.