Method of minimizing defect sources inside high density plasma reactor

Abstract

The present invention is used to minimize defect sources that are located inside a high density plasma reactor. The proposed invention is a method that comprises the following steps. First, numerous semiconductor processes are performed by the high density plasma reactor and a cumulative operating duration of the high density plasma reactor is recorded. Second, whenever the cumulative operating duration does not exceed a predetermined limitation, numerous semiconductor processes are continuously performed by the high density plasma reactor excesses. Third, whenever the cumulative operation duration exceeds the predetermined limitation, operation of the high density plasma reactor is stopped and a cycle purge process is performed to minimize the quantity of defect sources inside the high density plasma reactor. The so-called cycle purge process comprises the following basic steps. First, the high density plasma reactor is filled by a cleaning gas. Second, the cleaning gas is pumped out of the high density plasma reactor, wherein some defect sources inside the high density plasma reactor are carried out with the cleaning gas. Incidentally, after the so-called cycle purge process is finished, the cumulative operating duration is reset to zero and then the first step of the method of the present invention is performed again.

Dependencies are inferred from the claim text.