Manufacturing process for semiconductor wafer

A manufacturing process of a semiconductor wafer comprising:

• a slicing step of obtaining a wafer in a shape of thin disk by slicing a single crystal ingot;
• a surface-grinding step of flattening a surface of the wafer;
• a chamfering step of chamfering peripheral edge portions of the wafer;
• and a mirror-polishing step of mirror-polishing the surface of the wafer, wherein the surface-grinding step comprises a double-side surface-grinding step of grinding both sides of the wafer simultaneously with a double-side grinding machine prior to the chamfering step;
• and a secondary grinding step is performed by grinding both sides of the wafer simultaneously using a finish grinding stone after the chamfering step is carried out following the double-side surface-grinding step.

A manufacturing process of a semiconductor wafer comprising:

• a slicing step of obtaining a set of wafer s in shapes of thin disk s by slicing a single crystal ingot;
• a surface-grinding step of flattening surfaces of the set of wafers;
• a chamfering step of chamfering peripheral edge portions of the set of wafers;
• and a mirror-polishing step of mirror-polishing the surfaces of the set of wafers, wherein thickness of the set of the wafers is made uniform by a double-side surface-grinding step of grinding both sides of the wafer simultaneously with a double-side grinding machine prior to the chamfering step;
• and a secondary grinding step is performed by infeed type single-side grinding using a cup-shaped grinding stone after the chamfering step is carried out following the double-side surface-grinding step so as to obtain a set of wafers having small variation with regard to chamfer width values.

A manufacturing process of a semiconductor wafer comprising:

• a slicing step of obtaining a set of wafers in shapes of thin disks by slicing a single crystal ingot;
• a surface-grinding step of flattening a surface of the set of wafers;
• a chamfering step of chamfering peripheral edge portions of the set of wafers;
• and a mirror-polishing step of mirror-polishing the surface of the set of wafers, wherein thickness of the set of the wafers is made uniform by a double-side surface-grinding step of grinding both sides of the wafer simultaneously with a double-side grinding machine prior to the chamfering step;
• and a secondary grinding step is performed by grinding both sides of the wafer simultaneously using a finish grinding stone after the chamfering step is carried out following the double-side surface-grinding step so as to obtain a set of wafers having small variation with regard to chamfer width values.