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AssigneeSony Corporation
InventorTakaaki Miyamoto
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A method of chemical vapor growing a metal nitride film comprises steps of reducing to remove a native oxidation film on a substrate to be processed by activated hydrogen species, forming a metal film such as of W or Ta by plasma CVD, and then nitriding the metal film by activated NH species as a nitriding agent to convert the metal film into a metal nitride film such as of W2N or TaN. Formation and nitridation of the metal film may be repeated for several times. Since the metal compound gas and the nitriding gas are not simultaneously introduced into the CVD chamber, formation of dust of side reaction products such as ammonium halides can be decreased to reduce contamination in the chamber and on the substrate during film deposition, and since nitridation with the activated NH species is a readily proceeding reaction system, a sufficiently nitrided metal nitride film can be provided. The method is applicable to a method of manufacturing electronic devices.
A chemical vapor deposition method of forming a metal nitride film on a substrate having a native oxide film on a surface thereof, which comprises the steps of:
A chemical vapor deposition method of forming a metal nitride film on a substrate having a native oxide film on a surface thereof, which comprises the steps of:
A method of manufacturing an electronic device by a chemical vapor deposition method, which comprises the steps of:
A method of manufacturing an electronic device by a chemical vapor deposition method, which comprises the steps of:
Dependencies are inferred from the claim text.