Method for manufacturing semiconductor device with stagnated process gas
AssigneeSamsung Electronics Co., Ltd.
InventorsSe-Jin Lee, Jae-Chul Lee, Hyun-Bo Shin, Dae-Hoon Bae
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Abstract
According to the present invention, a process of the present invention is performed with stagnated process gas in a chamber. The process comprises the steps of supplying process gas into a chamber, blocking process gas entry and exit from the chamber so as to stagnate the supplied gas therein, and performing the process. As a result, a process time can be significantly reduced, thereby maximizing yield and reducing the substantial amount of the process gas.
Claims4
A method for manufacturing a semiconductor device by performing a diffusion or annealing process with respect to a predetermined object in a chamber by using a diffusion or annealing process gas, comprising the steps of:
- supplying said diffusion or annealing process gas into said chamber;
- blocking diffusion or annealing process gas entry and exit from said chamber to stagnate said supplied process gas in said chamber;
- and
- performing said diffusion or annealing process.
Dependencies are inferred from the claim text.