Method of manufacturing semiconductor device in which damage to gate insulating film can be reduced

A method of manufacturing a semiconductor device, comprising:

• (i) providing a semiconductor substrate of a first conductive type;
• (j) forming field isolation regions on said semiconductor substrate;
• (k) providing first and second nonisolation regions in which said field isolation regions are not formed on said semiconductor substrate;
• (l) forming a gate electrode on a gate insulating film in said first non-isolation region;
• (m) forming a first conductive type of diffusion layer in said second non-isolation region;
• (n) connecting said gate electrode through said diffusion layer to said semiconductor substrate;
• (o) after forming said gate insulating film, transforming said diffusion layer into a diffusion layer of a second conductive type different from said first conductive type;
• and
• (p) connecting said gate electrode to said semiconductor substrate, through a diode of said second conductive type of diffusion layer and said semiconductor substrate.

A method of manufacturing a semiconductor device, comprising:

• (r) providing a semiconductor substrate of a first conductive type and a gate electrode on a gate insulating film above said semiconductor substrate;
• (s) short-circuiting said gate electrode to said semiconductor substrate;
• and
• (t) using plasma process after said (s) step,
• wherein said short-circuiting said gate electrode comprises forming a diffusion layer of said first conductive type in said semiconductor substrate such that said diffusion layer is connected to said gate electrode.

A method of manufacturing a semiconductor device, comprising:

• (aa) providing a semiconductor substrate of a first conductive type;
• (ab) forming field isolation regions on said semiconductor substrate;
• (ac) providing first and second non-isolation regions in which said field isolation regions are not formed on said semiconductor substrate;
• (ad) forming a gate insulating film on said first and second non-isolation regions;
• (ae) removing said gate insulating film formed on said second non-isolation region to expose a contact portion of said semiconductor substrate;
• (af) forming a gate electrode on said gate insulating film of said first non-isolation region and on said second non-isolation region in which said contact portion of said semiconductor substrate is exposed;
• (ag) implanting impurity ions of said first conductive type into said second non-isolation region to form a diffusion layer of said first conductive type;
• (ah) etching said gate electrode such that said gate electrode is in contact with a first portion of said diffusion layer and a second portion of said diffusion layer is exposed;
• (ai) forming an interlayer insulating film on said gate electrode and said diffusion layer;
• (aj) etching said interlayer insulating film to form a hole reaching said gate electrode and said diffusion layer;
• and
• (ak) after forming said gate insulating film, implanting impurity ions of a second conductive type different from said first conductive type through said hole into said diffusion layer to form a diffusion layer of said second conductive type.

A method of manufacturing a semiconductor device, comprising:

• (am) providing a semiconductor substrate of a first conductive type;
• (an) forming a field isolation region on said semiconductor substrate;
• (ao) providing first and second non-isolation regions in which said field isolation regions are not formed on said semiconductor substrate;
• (ap) forming a gate insulating film on said first and second non-isolation regions;
• (aq) implanting impurity ions of said first conductive type into said second non-isolation region to form a diffusion layer of said first conductive type;
• (ar) after said (aq) step, removing at least a portion of said gate insulating film in said second non-isolation region to expose a contact portion of said semiconductor substrate;
• (as) forming a gate electrode on said first and second non-isolation regions and said field isolation regions;
• (at) etching said gate electrode such that said gate electrode covers an entire surface portion of said diffusion layer;
• (au) forming an interlayer insulating film on said gate electrode;
• (av) etching said interlayer insulating film such that a hole reaching said gate electrode is formed;
• and
• (aw) after forming said gate insulating film, implanting impurity of a second conductive type different from said first conductive type into said diffusion layer through said hole to form a diffusion layer of said second conductive type.

A method of manufacturing a semiconductor device, comprising:

• (ba) providing a semiconductor substrate of a first conductive type;
• (bb) forming field isolation regions on said semiconductor substrate;
• (bc) providing first, second and third non-isolation regions in which said field isolation regions are not formed on said semiconductor substrate, wherein said first non-isolation region is a region to be a diffusion layer of a second conductive type different from said first conductive type, and said third non-isolation region is a region to be a diffusion layer of said first conductive type;
• (bd) forming a gate insulating film on said first and third non-isolation regions;
• (be) forming a diffusion layer of said first conductive type in said second non-isolation region;
• (bf) forming a gate electrode on said gate insulating film in said first and third non-isolation regions, said diffusion layer in said second non-isolation region and said field isolation regions;
• and
• (bg) after forming said gate insulating film, transforming said diffusion layer into a diffusion layer of said second conductive type.