Back to results
US 6,284,608 B1Granted
Method for making accumulation mode N-channel SOI
AssigneeAdvanced Micro Devices, Inc.
InventorsZoran Krivakapic, Srinath Krishnan, Witold Maszara
Life of this patent
Estimating the term…
Abstract
A method of manufacturing an accumulation mode n-channel Silicon On Insulator (SOI) transistor includes forming an intrinsic silicon body region implanted with two deep Boron and one shallow Phosphorous implants; forming source/drain regions each implanted with Arsenic; and forming p-type regions adjacent each of the source and drain regions and disposed along the transistor channel. The SOI transistor has a higher transconductance than known SOI devices.
Claims5
A method of making an n-channel Silicon on Insulator (SOI) transistor comprising:
- making a trench isolation thus defining the body region of the transistor;
- delivering a deep p-type and a shallow n-type implant to the body region through an insulating layer formed over the body region;
- forming a gate over the body region and separated therefrom by a gate oxide;
- forming spacers and liners over the body region and adjacent said gate;
- implanting the body region with n-type dopants to form source and drain regions separated from each other by a channel;
- removing the spacer and performing a tilted channel implant to form p-type regions adjacent each of the source and drain regions and disposed along the channel;
- delivering a shallow p-type implant after removing the spacers;
- and delivering a deep p-type implant.
5 more elements
Dependencies are inferred from the claim text.