MOS-gate tunneling-injection bipolar transistor

A method of fabricating a transistor which combines the large current drive capacity of a bipolar junction transistor (BJT) with the smaller device size of a metal oxide semiconductor field effect transistor (MOSFET), the method comprising:

• providing a gate stack over a substrate, the gate stack having a left side and a right side;
• large-tilt-angle implanting a first impurity in the substrate to form a buffer region on the left side of the gate stack and a buffer region on the right side of the gate stack, the buffer region on the left side of the gate stack being separated by a first distance from the gate stack and the buffer region on the right side of the gate stack being separated by a second distance from the gate stack, the first distance and the second distance being related to the angle of the implant;
• and
• implanting a second impurity in the substrate to form an emitter and a collector, the emitter being located proximate the left side of the gate stack and the collector being located proximate the right side of the gate stack, the collector further being separated from the gate stack by the buffer region of the right side of the gate stack.