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US 6,284,575 B1Granted
Method of making a semiconductor device having fuses for repair
AssigneeHyundai Electronics Industries Co., Ltd.
InventorSuk Soo Kim
Life of this patent
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Abstract
A method of making a semiconductor device having fuses for repair, using a etch stop film to form an insulating film having a constant thickness. The etch stop film is patterned and then removed. Remaining portions of the insulating film have a constant thickness for each fuse box, thereby improving fabricating process yield and reliability.
Claims2
A method of fabricating a semiconductor device having fuses for repair comprising the steps of:
- forming a lower insulating film on a semiconductor substrate;
- forming a plurality of fuses on said lower insulating film;
- forming an intermediate insulating film on a resulting structure;
- using TEOS film to form an etch stop film on said intermediate insulating film;
- forming an etch stop film pattern by etching said etch stop film with an etch mask which exposes a larger area than that of a predetermined fuse box;
- forming an upper insulating film on a resulting structure;
- forming a plurality of fuse boxes by etching said upper insulating film with an etch mask which exposes an area of a defined fuse box in order to expose at least a portion of said etch stop film pattern;
- and
- removing said exposed portion of said etch stop film pattern, whereby a remaining intermediate insulating film has a constant thickness for each of said plurality of fuse boxes.
6 more elements
Dependencies are inferred from the claim text.