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US 6,284,553 B1Granted
Location dependent automatic defect classification
AssigneeAdvanced Micro Devices, Inc.
InventorsPaul J. Steffan, Allen S. Yu
Life of this patent
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Abstract
A method of manufacturing semiconductor devices wherein defects on each layer of a semiconductor wafer are determined to be killer or non-killer defects by correlating critical area information on a die with defect size and classification information. The killer/non-killer defect information is tabulated in a defect table from which statistical yield predictions can be made.
Claims8
A method of manufacturing semiconductor devices, the method comprising:
- processing a layer on a lot of semiconductor wafers;
- selecting at least one inspection wafer from the lot of semiconductor wafers;
- inspecting the layer on the at least one inspection wafer for defects on a scan tool;
- generating defect information by the scan tool;
- inputting the defect information into a defect management system;
- reviewing the defects on the inspection wafers on a review and classification tool;
- generating classification information by the review and classification tool;
- inputting the classification information to the defect management system;
- generating critical area information for each die on the inspection wafer, wherein the critical area information includes what type classification defect and what size defect would be a killer defect for each critical area;
- inputting the critical area information into the defect management system;
- correlating the classification information with the critical area information to determine killer defect information for each critical area.
8 more elements
Dependencies are inferred from the claim text.