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US 6,284,148 B1Granted
Method for anisotropic etching of silicon
AssigneeRobert Bosch GmbH
InventorsFranz Laermer, Andrea Schilp
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Abstract
A method is proposed for anisotropic etching of micro- and nanofeatures in silicon substrates using independently controlled etching steps and polymer deposition steps which succeed one another alternatingly, the quantity of polymer deposited decreasing in the course of the polymer deposition steps, thus preventing any underetching of the micro- and nanofeatures.
Claims9
A method for anisotropically etching microfeatures and nanofeatures, comprising the steps of:
- depositing a quantity of a polymer on a silicon substrate;
- etching the microfeatures and the nanofeatures on the silicon substrate;
- and
- independently controlling and repeating the etching step and the polymer deposition step in an alternating fashion;
- wherein the quantity of the polymer deposited during the polymer deposition step is decreased in a controlled manner with the repetition of the polymer deposition step.
2 more elements
Dependencies are inferred from the claim text.