Method of processing wafers with low mass support
AssigneeASM America, Inc.
InventorsFranciscus Bernardus Maria Van Bilsen, Jason Mathew Layton, Ivo Raaijmakers
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Abstract
A method is provided for treating wafers on a low mass support. The method includes mounting a temperature sensor in proximity to the wafer, which is supported on the low mass support, such that the sensor is only loosely thermally coupled to the wafer. A temperature controller is programmed to critically tune the wafer temperature in a temperature ramp, though the controller directly controls the sensor temperature. A wafer treatment, such as epitaxial silicon deposition, is started before the sensor temperature has stabilized. Accordingly, significant time is saved for the treatment process, and wafer throughput improved.
Claims17
A semiconductor processing apparatus, comprising:
- a processing chamber;
- a support structure for supporting a wafer within the processing chamber;
- a plurality of heating elements arranged to heat the wafer within the processing chamber;
- a temperature sensor arranged to be loosely thermally coupled to the wafer when the wafer is supported within the processing chamber;
- and
- a temperature controller connected to at least one of the heating elements and the temperature sensor for controlling the temperature of the temperature sensor during a temperature ramp.
A chemical vapor deposition apparatus for depositing layers upon a semiconductor substrate, comprising:
- a single substrate support structure, the support structure having a thermal mass less than about five times a thermal mass of the substrate;
- a process chamber sized for supporting a single substrate upon the support structure;
- a temperature controller connected to a heat source;
- and
- a temperature sensor driving the temperature controller, the temperature sensor arranged to sense temperature at a point spaced at least about 0.010 inch from the support structure.
Dependencies are inferred from the claim text.