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US 6,284,041 B1Granted
Process for growing a silicon single crystal
AssigneeSumitomo Metal Industries, Ltd.
InventorsKen Hamada, Hiroyuki Tanabe
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AssigneeSumitomo Metal Industries, Ltd.
InventorsKen Hamada, Hiroyuki Tanabe
Estimating the term…
A process for growing a single crystal in which variation in a dopant concentration in a melt contained in a crucible can be reduced and a single crystal having small variation in specific resistance can be produced. The process is the Czhohralski growth of a silicon single crystal including the steps: melting a crystal raw material in a crucible; bringing into contact a seed crystal to a melt contained in the crucible to thereby stabilize the surface temperature of the melt that is called “the seed crystal contact technique;” and adding a dopant into the crucible after carrying out the seed crystal contact technique. Furthermore, in the process, a dopant may be added while the seed crystal contact technique is stopped, and the seed crystal contact technique may be carried out again. Alternatively, a dopant may be added while the seed crystal contact technique is carried out.
A process for growing a silicon single crystal based on the Czochralski method comprising:
A process for growing a silicon single crystal based on the Czochralski method comprising:
A process for growing a silicon single crystal based on the Czochralski method comprising:
Dependencies are inferred from the claim text.