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US 6,281,377 B1Granted
Substituted cycloalkene new copper precursors for chemical vapor deposition of copper metal thin films
AssigneeSharp Laboratories of America, Inc.
InventorsWei-Wei Zhuang, Tue Nguyen, Lawrence J. Charneski, David R. Evans, Sheng Teng Hsu
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Abstract
A method of forming a volatile copper precursor for chemical vapor deposition of copper metal thin film includes formation of a volatile liquid having a chemical formula of (n-R-m-cyclohexene)Cu(I)(hfac) or (n-R-m-cyclopentene)Cu(I)(hfac), where n,m=1-6, and where R is a alkyl, such as methyl and ethyl.
Claims8
A method of forming a volatile liquid copper precursor for chemical vapor deposition of copper metal thin films, comprising:
- placing 200 mL of CH2Cl2 in a vessel;
- adding about 41.26 g (0.29 mol) of Cu2O , thereby forming Cu2O dichloromethane red solution;
- adding 57 mL (0.48 mol) of 1-methyl-1-cyclohexene;
- stirring the solution at room temperature for about five minutes;
- adding about 0.48 mol of a β-diketone;
- stirring for about eleven minutes;
- filtering the solution through celite, having a filter pore size of between about 10 μm and 25 μm;
- stripping the solution, under vacuum, for about two hours;
- heating the solution to about 35° C., under vacuum, and stripping for about 30 minutes;
- filtering the solution through a fine filter having a pore size of about 1 μm;
- and
- adding about 5% to about 10%, by weight, of a stabilizing ligand.
9 more elements
A method of forming a volatile copper precursor for chemical vapor deposition of copper metal thin film, comprising:
- forming a volatile liquid having a chemical formula taken from the group of chemical formulas consisting of (1-R-1-cyclohexene)Cu(I)(hfac) and (1-R-1-cyclopentene)Cu(I)(hfac), where R is a alkyl, taken from the group of alkyls consisting of methyl and ethyl.
Dependencies are inferred from the claim text.