Dielectric cure for reducing oxygen vacancies
AssigneeMicron Technology, Inc.
InventorsCem Basceri, Gurtej S. Sandhu
Life of this patent
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Abstract
A unique electrochemical process fills oxygen vacancies in dielectrics while reducing oxidation of nearby electrodes and conductors. Preferably, an electromagnetic field or bias is applied to a dielectric. The bias causes oxygen vacancies in the dielectric to migrate to the surface of the dielectric. As the oxygen vacancies migrate toward the surface, oxygen ions fill the oxygen vacancies. In one embodiment, a unique plasma treatment provides the oxygen ions that react with the oxygen vacancies. In another embodiment, a unique electrolysis treatment provides the oxygen ions that react with the oxygen vacancies.
Claims62
A method of reducing oxygen vacancies in a high dielectric constant capacitor comprising:
- depositing a first electrode on a semiconductor substrate;
- depositing a high constant dielectric above the first electrode, the high constant dielectric having a plurality of oxygen vacancies therein;
- applying an electrical bias to the high constant dielectric wherein the polarity of the electrical bias causes the oxygen vacancies to migrate towards the surface of the high constant dielectric;
- and
- plasma treating the high constant dielectric with a plurality of oxygen ions at a temperature below 500° C. wherein the oxygen ions react to fill at least a portion of the oxygen vacancies from the high constant dielectric.
A method of reducing oxygen vacancies in a dielectric comprising:
- applying an electromagnetic field to a dielectric to cause oxygen vacancies in the dielectric to migrate towards the surface of the dielectric;
- and
- plasma treating the dielectric with oxygen ions which react with at least a portion of the oxygen vacancies in the dielectric.
A method of reducing oxygen vacancies in a memory cell comprising:
- depositing a first electrode over a portion of a poly plug;
- depositing a dielectric over the first electrode, the dielectric having a plurality of oxygen vacancies therein;
- applying an electromagnetic field that causes the oxygen vacancies in the dielectric to migrate;
- plasma treating the dielectric with a plurality of oxygen ions wherein at least a portion of oxygen ions react with the oxygen vacancies in the dielectric;
- and
- depositing a second electrode over at least a portion of the dielectric.
A method of reducing oxygen vacancies in a metal-insulator-metal structure comprising:
- depositing a first metal electrode over a substrate;
- depositing a dielectric over the first metal electrode, the dielectric having a plurality of oxygen vacancies therein;
- applying an electromagnetic field that causes the oxygen vacancies in the dielectric to migrate;
- plasma treating the dielectric with a plurality of oxygen ions wherein the oxygen ions fill at least a portion of the oxygen vacancies in the dielectric;
- and
- depositing a second metal electrode over the dielectric.
A method of reducing oxygen vacancies in a dielectric on a semiconductor, the method comprising:
- depositing on a semiconductor substrate, a high constant dielectric, the high constant dielectric having a plurality of oxygen vacancies therein;
- applying an electromagnetic field to the dielectric wherein the electromagnetic field causes the oxygen vacancies in the high constant dielectric to migrate towards the surface of the high constant dielectric;
- and
- applying an electrolytic solution to the high constant dielectric wherein the electrolytic solution comprises at least a portion of oxygen ions that react with the oxygen vacancies to thereby fill a portion of the oxygen vacancies from the high constant dielectric.
A method of reducing oxygen vacancies in a dielectric comprising:
- applying an electromagnetic field to a dielectric to cause oxygen vacancies in the dielectric to migrate towards the surface of the dielectric;
- and
- applying an electrolytic solution to the dielectric wherein oxygen ions in the electrolytic solution react with at least a portion of the oxygen vacancies in the dielectric.
A method of reducing oxygen vacancies in a memory cell comprising:
- depositing a first electrode over a portion of a semiconductor transistor structure;
- depositing a dielectric over the first electrode, the dielectric having a plurality of oxygen vacancies therein;
- applying an electromagnetic field that causes the oxygen vacancies in the dielectric to migrate;
- subjecting the dielectric to electrolysis wherein oxygen ions react with the oxygen vacancies in the dielectric;
- and
- depositing a second electrode over the dielectric.
A method of reducing oxygen vacancies in a metal-insulator-metal structure comprising:
- depositing a first metal electrode over a substrate;
- depositing a dielectric over the first metal electrode, the dielectric having a plurality of oxygen vacancies therein;
- applying an electromagnetic field that causes the oxygen vacancies in the dielectric to migrate;
- subjecting the dielectric to electrolysis wherein oxygen ions react with at least a portion of the oxygen vacancies in the dielectric;
- and
- depositing a second metal electrode over the dielectric.
A method of reducing oxygen vacancies in a dielectric comprising:
- applying an electromagnetic field to a dielectric having oxygen vacancies therein;
- and
- applying an electrolytic solution to the dielectric wherein oxygen ions in the electrolytic solution react with at least a portion of the oxygen vacancies in the dielectric.
A method of reducing oxygen vacancies in a dielectric comprising:
- applying an electromagnetic field to a dielectric to cause oxygen vacancies in the dielectric to migrate;
- and
- applying oxygen ions to the surface of the dielectric wherein the oxygen ions react with the migrating oxygen vacancies.
A method of reducing oxygen vacancies comprising:
- applying an electromagnetic field that causes the oxygen vacancies in a material to migrate;
- and
- reducing the amount of oxygen vacancies by subjecting the material to an oxidizing treatment.
Dependencies are inferred from the claim text.