Method for forming an inter-layer dielectric layer

A method for forming an inter-layer dielectric layer comprising:

• providing a substrate on which a plurality of first polysilicon lines, a first inter-layer dielectric layer, and a plurality of second polysilicon lines are formed;
• forming a second inter-layer dielectric layer to cover the second polysilicon lines and fill spaces between the second polysilicon lines;
• forming a spin-on glass layer on the second inter-layer dielectric layer;
• etching the spin-on glass layer and the second inter-layer dielectric layer until the second polysilicon lines is exposed;
• forming a cover layer on the second polysilicon lines and a remainder of the second inter-layer dielectric layer;
• and
• forming an oxide layer on the cover layer.

A method for forming an inter-layer dielectric layer, comprising:

• providing a substrate on which a plurality of first polysilicon lines, a first interlayer dielectric layer on the substrate and the first polysilicon line, and a plurality of second polysilicon lines on the first inter-layer dielectric layer are formed;
• forming a second inter-layer dielectric layer to cover the second polysilicon lines and fill spaces between the second polysilicon lines;
• forming a spin-on glass layer on the second inter-layer dielectric layer;
• etching back the spin-on glass layer and the second dielectric layer until the spin-on glass is completely removed and the second dielectric layer is partially removed using a top surface of the second polysilicon lines as an etching end point;
• forming a cover layer on the second polysilicon lines and on the second inter-layer dielectric layer between the second polysilicon lines;
• and
• forming an oxide layer on the cover layer.

A fabrication method for an inter-layer dielectric layer comprising:

• providing a substrate on which a plurality of first polysilicon lines, a first interlayer dielectric layer, and a plurality of second polysilicon lines are formed thereon;
• forming a second inter-layer dielectric layer on the second polysilicon lines and fill spaces between the second polysilicon lines;
• forming a spin-on glass layer on the second inter-layer dielectric layer;
• etching the spin-on glass layer and the second inter-layer dielectric layer until an intensity of a signal of carbon monoxide monitored at a wavelength 219 nm has changed;
• and
• forming a cover layer on the second polysilicon lines and on a remainder of the second inter-layer dielectric layer.