Method for making contact with a semiconductor layer and semiconductor structure having a plurality of layers
AssigneeInfineon Technologies AG
InventorsJenoe Tihanyi, Wolfgang Werner
Life of this patent
Estimating the term…
Abstract
A method for making contact with a covered semiconductor layer through a contact hole, includes producing a contact hole in an insulator layer for making contact with at least one covered semiconductor layer. A heavily doped polysilicon layer is produced on the surface of the insulator layer and the contact hole is at least partially filled with heavily doped polysilicon. A metal layer is applied on the heavily doped polysilicon layer for establishing an ohmic connection to the outside. A semiconductor component fabricated according to the method is also provided.
Claims11
In a method for making contact with at least one covered semiconductor layer through a contact hole, the improvement which comprises:
- providing the at least one semiconductor layer;
- covering the at least one semiconductor layer with an insulator layer having a surface;
- producing the contact hole in the insulator layer for making contact with the at least one covered semiconductor layer;
- producing a heavily doped polysilicon layer on the surface of the insulator layer while at least partially filling the contact hole with heavily doped polysilicon;
- and
- applying a metal layer on the heavily doped polysilicon layer for establishing an ohmic connection to the outside.
A semiconductor structure having a plurality of layers, comprising:
- at least one semiconductor layer for electrical connection to the outside;
- an insulator layer disposed above said at least one semiconductor layer, said insulator layer having at least one contact hole formed therein for exposing said at least one semiconductor layer;
- and
- an electrically conductive contact layer at least partially filling said contact hole, said contact layer including a first layer made of a heavily doped polysilicon and a second layer disposed on said first layer and made of a metallic conductor.
A MOSFET, comprising:
- at least one semiconductor layer for electrical connection to the outside;
- an insulator layer disposed above said at least one semiconductor layer, said insulator layer having at least one contact hole formed therein for exposing said at least one semiconductor layer;
- and
- an electrically conductive contact layer at least partially filling said contact hole, said contact layer including a first layer made of a heavily doped polysilicon and a second layer disposed on said first layer and made of a metallic conductor.
Dependencies are inferred from the claim text.