Semiconductor apparatus and method for fabricating the same
AssigneeOki Electric Industry Co., Ltd.
InventorTakashi Ohsumi
Life of this patent
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Abstract
A semiconductor apparatus includes a semiconductor integrated circuit including a conductive pattern; an insulating layer which is formed on the semiconductor integrated circuit to forms a plurality of base members having uneven heights; an opening which is formed through the insulating layer to expose a part of the conductive pattern; and a conductive layer which is formed on the insulating layer and the opening, the conductive layer is extending from the exposed portion of the conductive pattern to the top surface of the highest base member. An electrode is composed of the insulating layer, the opening and the conductive layer.
Claims18
A method for fabricating a semiconductor apparatus, comprising:
- providing a semiconductor integrated circuit comprising a conductive pattern:
- forming an insulating layer on the semiconductor integrated circuit;
- forming an opening through the insulating layer to expose a part of the conductive pattern;
- forming a conductive layer over the insulating layer with the opening;
- removing the conductive layer except a portion extending from the exposed part of the conductive pattern to a predetermined portion of the insulating layer;
- and
- shaping the insulating layer at the portion uncovered with the conductive layer to have a height lower than the portion covered with the conductive layer wherein the conductive layer acts as a mask during the shaping step.
A method for fabricating a semiconductor apparatus, comprising:
- providing a semiconductor integrated circuit comprising a conductive pattern;
- forming an insulating layer on the semiconductor integrated circuit;
- forming an opening through the insulating layer to expose a part of the conductive pattern;
- forming a conductive layer over the insulating layer with the opening;
- removing the conductive layer except a portion extending from the exposed part of the conductive pattern to a predetermined portion of the insulating layer;
- and
- shaping the insulating layer at the portion uncovered with the conductive layer to have a thickness thinner than the portion covered with the conductive layer wherein the conductive layer acts as a mask the shaping step.
Dependencies are inferred from the claim text.