Method of manufacturing a semiconductor device
AssigneeHyundai Electronics Industries Co., Ltd.
InventorIn Seok Yeo
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Abstract
There is disclosed a method of manufacturing a semiconductor device capable of solving the problems that a conventional method could not secure a sufficient beam current upon ion injection when forming a junction region at shallow thickness as the integration level of'devices becomes higher, and also it causes a short channel effect etc. The method includes forming a junction region, forming a selective epitaxial growth layer and then forming a LDD region, using a facet phenomenon occurring at the edge portion of the gate electrode when forming an elevated junction structure by use of a selective epitaxial growth method. Thus, it can obtain a junction region having a very shallow depth, accomplish a higher integration level of devices and prohibit a short channel effect.
Claims12
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode consisted of a gate oxide film, a conductive layer and a first insulating film, thermal processing it under oxidization atmosphere, and forming a thermal oxide film on the upper portion of the gate oxide film and at the sidewalls of the conductive layer;
- forming a second insulating film on the entire structure and performing a blanket etching process to form a first insulating film spacer at the sidewalls of the gate electrode and forming a third insulating film on the entire structure in which the first insulating film spacer is formed and performing a blanket etching process to form a second insulating film spacer at the sidewalls of the first insulating film spacer;
- performing a high concentration ion injection process using the gate electrode. the first insulating film spacer and the second insulating film spacer as a mask, thus forming a junction region;
- performing a cleaning process to remove the second insulating film spacer;
- performing a selective epitaxial growth method to form a selective epitaxial growth layer on the exposed semiconductor device;
- and
- performing a low concentration ion injection process to form a LDD region.
Dependencies are inferred from the claim text.