Methods of forming field effect transistor gates, and methods of forming integrated circuitry

A method of forming integrated circuitry comprising:

• forming a field effect transistor gate over a substrate, the gate comprising semiconductive material conductively doped with a conductivity enhancing impurity of a first type and a conductive diffusion barrier layer to diffusion of first or second type conductivity enhancing impurity;
• forming an insulative layer over the substrate;
• forming an opening into the insulative layer;
• forming semiconductive material conductively doped with a conductivity enhancing impurity of a second type within the opening;
• and
• providing the doped semiconductive material within the opening in electrical connection with the gate, with the conductive diffusion barrier layer of the gate being received between the semiconductive material of the gate and the semiconductive material within the opening.

A method of forming integrated circuitry comprising:

• forming a field effect transistor gate over a substrate, the gate comprising semiconductive material conductively doped with a conductivity enhancing impurity of a first type and a conductive diffusion barrier layer to diffusion of first or second type conductivity enhancing impurity received thereover;
• forming an insulative layer over the gate;
• forming an opening into the insulative layer to a conductive portion of the gate;
• and
• forming semiconductive material conductively doped with a conductivity enhancing impurity of a second type within the opening in electrical connection with the conductive portion, with the conductive diffusion barrier layer of the gate being received between the semiconductive material of the gate and the semiconductive material within the opening.