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US 6,281,076 B1Granted
Method for manufacturing nonvolatile memory device capable of preventing damage to side walls of stacked gate and active region
AssigneeSamsung Electronics Co., Ltd.
InventorsYong-ju Choi, Jeong-hyuk Choi
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Abstract
A method for manufacturing a nonvolatile memory device is provided. After forming an etching damage prevention layer on the entire surface of a stacked gate structure and on the entire surface of a semiconductor substrate, a self-aligned source etching process is performed. Thus, damage to side walls of the stacked gate structure and an active region can be prevented during the self-aligned source etching process.
Claims7
A method for manufacturing a nonvolatile memory device comprising:
- providing a semiconductor substrate;
- defining a plurality of active regions by forming a plurality of field oxide layers extending parallel in one direction on the semiconductor substrate;
- forming a plurality of stacked gates perpendicular to the plurality of active regions;
- forming source and drain regions within the active regions exposed between the stacked gates;
- forming an etching damage prevention layer on the entire surface of the stacked gates and on the active regions;
- exposing the semiconductor substrate by etching the field oxide layers exposed between the stacked gates;
- and
- forming source line diffusion layers for connecting the source regions in a direction parallel to the stacked gates by implanting an impurity into the exposed semiconductor substrate.
5 more elements
Dependencies are inferred from the claim text.