Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring therefor and method of producing such wiring

A method of producing a semiconductor integrated circuit device having MISFETs arranged in a first direction and in a second direction which is perpendicular to said first direction, and capacitor elements each having a first electrode respectively connected to one of said MISFETs, a dielectric film and a second electrode, comprising the steps of:

• (a) depositing a first conductive film over a semiconductor substrate;
• (b) patterning said first conductive film in order to form first electrodes for said capacitor elements, said first electrodes being arranged in said first and second directions;
• (c) depositing a dielectric film on said first electrode;
• (d) depositing a second conductive film on said dielectric film;
• and
• (e) etching said second conductive film and said dielectric film in order to form a second electrode for said capacitor element and a patterned dielectric film,
• wherein said patterned dielectric film has substantially a same pattern as that of the second electrode and exists only under said second electrode, and wherein said second electrode is larger than said first electrode in said first and second directions.

A method of producing a semiconductor integrated circuit device having MISFETs arranged in a first direction and in a second direction which is perpendicular to said first direction, and capacitor elements each having a first electrode respectively connected to one of said MISFETs, a dielectric film and a second electrode, comprising the steps of:

• (a) forming the first electrode for the capacitor element over a semiconductor substrate;
• (b) depositing a dielectric film on said first electrode;
• (c) depositing a conductive film on said dielectric film;
• and
• (d) patterning said conductive film and said dielectric film respectively to form a second electrode and a patterned dielectric film,
• wherein said patterned dielectric film has substantially a same pattern as that of said second electrode, and wherein said second electrode is larger than said first electrode in said first and second directions.

A method of producing a semiconductor integrated circuit device including capacitor elements arranged in a first direction and in a second direction perpendicular to said first direction, and each capacitor element having a first electrode, a second electrode and a dielectric film between said first and second electrodes, comprising the steps of:

• (a) forming first electrodes each having a first plane pattern, over a semiconductor substrate;
• (b) depositing an insulating film on said first electrodes;
• (c) forming a conductive film on said insulating film;
• and
• (d) etching said conductive film and said insulating film in order to form said second electrode having a second plane pattern and said dielectric film having a third plane pattern, wherein said third plane pattern is substantially the same as said second plane pattern, and said second plane pattern is larger than said first plane pattern in said first and second directions.