US 6,281,049 B1Granted

Semiconductor device mask and method for forming the same

AssigneeHyundai Electronics Industries Co., Ltd.

InventorSeung Ho Lee

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Abstract

A semiconductor device mask and a method for forming the same is provided in which a mask pattern defines dummy active regions in isolating regions. The semiconductor device mask and method reduce surface unevenness and prevent damage to an active region, which have been problems in isolating devices by trenches. The semiconductor device mask includes real active pattern regions formed in regions defined as the active regions in a mask having an isolating region and the active regions. A plurality of dummy active pattern regions preferably spaced at fixed intervals from one another surrounding relatively isolated active regions and excluding gate pattern forming regions. The gate pattern forming regions are preferably formed extending in one direction across the isolating region and the real active pattern regions.

Claims20

Dependent claims

A method for forming a semiconductor device mask, comprising:

forming real active regions;
defining the real active regions as a current pattern;
forming a dummy pattern, comprising:
forming a first pattern region respectively surrounding the current pattern by increasing dimensions of the current pattern by a first prescribed amount,
defining a second pattern region respectively surrounding the current pattern by increasing dimensions of the current pattern by a second prescribed amount, wherein the second prescribed amount is smaller than the first prescribed amount,
removing the second pattern region from the first pattern region to form a dummy pattern region, and
defining the dummy pattern region as the current pattern;
forming a plurality of dummy pattern regions by repeatedly forming dummy patterns as set forth above;
summing the plurality of dummy pattern regions;
defining gate line pattern regions, wherein the gate line pattern regions cross the real active regions;
removing dummy pattern regions located in the gate line pattern regions from the summed dummy pattern regions to define a set of dummy active pattern regions, where the set of dummy active pattern regions leave regions for forming gate line pattern regions intact;
and
combining the real active regions and the set of dummy active pattern regions to form the semiconductor device mask.

10 more elements

A method for forming a semiconductor device mask, comprising:

forming real active regions in a semiconductor substrate, wherein an isolating region is defined outside the real active regions;
forming a first dummy region pattern surrounding the real active regions;
forming a second dummy region pattern surrounding the first dummy region pattern to fill the isolating region, wherein the first and second dummy region patterns are made of dummy active patterns;
defining gate line pattern regions, wherein the gate line pattern regions cross the dummy active regions;
removing the dummy active pattern located in the gate line pattern regions from the first and second dummy region patterns to define a set of dummy active pattern regions;
combining the real active regions and the set of dummy active pattern regions to form the semiconductor device mask;
and
removing dummy active patterns from a region having a prescribed shape to cover inter-well edges from the set of dummy active pattern regions.

5 more elements

Dependencies are inferred from the claim text.