Complementary and exchange mask design methodology for optical proximity correction in microlithography
AssigneeInternational Business Machines Corporation
InventorNing Lu
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AssigneeInternational Business Machines Corporation
InventorNing Lu
Estimating the term…
A method and structure for performing optical proximity correction in a photolithographic mask to prevent rounding of corners and line end foreshortening of a shape on the photolithographic mask comprises changing a transparency of the photolithographic mask by adding serifs and holes along each edge of the shape intersecting a comer of the shape to establish complementary symmetry along each edge of the shape, changing a transparency of quadrants around each comer of the shape to form mirror image diagonal quadrants centered on corners of the shape, reducing the size of serifs and holes by cutting out unnecessary parts to make the serifs and holes less likely to be printed and exchanging part of the serifs and holes around a comer to make the serifs and holes not printable.
A method of performing optical proximity correction in a photolithographic mask to prevent corner rounding and line end foreshortening, said method comprising:
A method of performing optical proximity correction in a photolithographic mask to prevent rounding of corners of a shape on said photolithographic mask, said method comprising:
A method of performing optical proximity correction in a photolithographic mask to prevent rounding of corners of a shape on said photolithographic mask, said method comprising:
Dependencies are inferred from the claim text.