Use of a chemically active reticle carrier for photomask etching
AssigneeMicron Technology, Inc.
InventorsRichard Stocks, Kevin Donohoe
Life of this patent
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Abstract
A method and apparatus for improving etch uniformity in reticle etching by eliminating local effects at the edge of the reticle is disclosed. The present invention relates to a reticle frame which surrounds the reticle. The reticle frames are patterned with a pattern profile similar to that of the reticle to prevent edge uniformities of the reticle by allowing uniform plasma etching of the entire reticle surface. The reticle frames may also be used to move the reticle in and out of etch chambers without damaging them.
Claims43
A method for etching a reticle comprising:
- providing a reticle having at least a first light blocking or partially light transmnissive layer thereon and at least a first pattern transfer layer on said first light blocking or partially light transmissive layer;
- providing a frame having an opening for receiving said reticle, said frame having at least a second light blocking or partially light transmissive layer thereon and at least a second pattern transfer layer on said second light blocking or partially light transmissive layer, wherein said second light blocking or partially light transmissive layer has physical and chemical properties which will increase uniformity of the etching of said reticle when said frame containing said reticle is exposed to a plasma;
- placing said reticle in said frame;
- and
- etching said reticle and frame with a plasma.
A method for forming a reticle comprising:
- providing a reticle substrate;
- forming at least a first light blocking or partially light transmissive layer thereon;
- forming at least a first pattern transfer layer on said first light blocking or partially light transmissive layer;
- patterning said pattern transfer layer with a predetermined pattern;
- providing a frame having an opening to support said reticle;
- forming at least a second light blocking or partially light transmissive layer on said frame;
- forming at least a second pattern transfer layer on said second light blocking or partially light transmissive layer, wherein said second light blocking or partially light transmissive layer has physical and chemical properties which will increase uniformity of the etching of said reticle when said frame containing said reticle is exposed to a plasma;
- patterning said second pattern transfer layer with a predetermined pattern;
- placing said reticle in said frame;
- and
- etching said reticle and said frame with a plasma.
A method for etching a reticle comprising:
- placing a reticle having a patterned layer thereon to be etched in a frame, whereby said edges of said reticle abut inside side edges of said frame and a top layer of said reticle is coplanar with a top layer of said frame, said frame having a property of reducing side edge effects from forming in said reticle when said reticle is placed in said frame and said reticle and said frame are exposed to a plasma etching environment;
- and
- etching said reticle while in said frame in a plasma etching environment.
Dependencies are inferred from the claim text.