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US 6,279,502 B1Granted
Resist developing method by magnetic field controlling, resist developing apparatus and method of fabricating semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorTsukasa Azuma
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Abstract
A semiconductor device is fabricated by the steps of coating an underlayer formed on a semiconductor substrate with chemically amplified resist, exposing the resist to light, bringing the resist into contact with an alkaline developing solution with applying a magnetic field to the alkaline developing solution for conducting development to form a resist pattern, and etching the underlayer on the semiconductor substrate using the resist pattern as a mask.
Claims1
A resist developing apparatus comprising:
- a rotating axis for pivotally supporting a semiconductor wafer coated with a chemically amplified resist;
- a nozzle for supplying an alkaline developing solution to the resist;
- a first coil for applying a magnetic field in vertical direction to the alkaline developing solution on the resist;
- and,
- a second coil for applying a magnetic field in horizontal direction to the alkaline developing solution on the resist.
2 more elements
Dependencies are inferred from the claim text.