Method for accurate channel-length extraction in MOSFETs
AssigneeAdvanced Micro Devices, Inc.
InventorsWei Long, Yowjuang W. Liu
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Abstract
A method for extracting a channel length between a source and a drain in a substrate of a transistor is disclosed herein. The method includes forward biasing the source with respect to the substrate to inject a charge into the substrate, collecting the charge at the drain, and calculating the channel length from the charge collected at the drain.
Claims20
A method for extracting a channel length between a source and a drain in a substrate of a transistor, the method comprising:
- forward biasing the source with respect to the substrate to inject a charge into the substrate;
- collecting the charge at the drain;
- and
- calculating the channel length from the charge collected at the drain.
An apparatus for extracting a channel length between a source and a drain in a substrate of a transistor, the means comprising:
- means for forward biasing the source with respect to the substrate to inject a charge into the substrate;
- means for collecting the charge at the drain;
- and
- means for calculating the channel length from the charge collected at the drain.
A system for extracting a channel length between a source region and a drain region in a substrate of a transistor, the system comprising:
- a voltage source coupled to the source region, the voltage source injecting a charge into the substrate;
- a current collector coupled to the drain region, the current collector collecting the charge from the substrate received by the drain region;
- and
- a processing unit, the processing unit determining the channel length from the charge collected by the current collector.
A system for extracting a channel length between a source region and a drain region in a substrate of a transistor, the system comprising:
- a voltage source coupled to the source region, the voltage source injecting a charge into the substrate;
- a current collector coupled to the drain region, the current collector collecting the charge from the substrate received by the drain region;
- and
- a processing unit, the processing unit determining the channel length from the charge collected by the current collector, wherein the processing unit determines channel length based on the equation:
- I c = f 1 ( ( V eb - V bi ) , V gb ) L eff + f 2 ( ( V eb - V bi ) , V gb )
- where veb is an emitter base bias, Vbi is a built in potential, vgb is gate to substrate voltage, and f1 and f2 are constant with respect to Ic and Leff.
Dependencies are inferred from the claim text.