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US 6,275,293 B1Granted
Method for measurement of OSF density
AssigneeSEH America, Inc.
InventorTimothy L. Brown
Life of this patent
Estimating the term…
Abstract
A novel automated method for measuring oxygen stacking fault density on silicon wafers using methods for measuring surface roughness of a silicon wafer. A silicon wafer manufactured according to processes that include the novel automated method for measuring oxygen stacking fault density on silicon wafers using methods for measuring surface roughness of a silicon wafer.
Claims7
A method of measuring OSF density comprising the steps of:
- a. preparing a silicon wafer for measurement with the processes of oxidation and etch;
- b. measuring the surface roughness of said silicon wafer;
- and
- c. multiplying a predetermined correlation factor to said surface roughness measurement to determine the OSF density of said silicon wafer.
1 more element
A method of measuring OSF density comprising the steps of:
- a. preparing a silicon wafer for measurement with the processes of oxidation and etch;
- b. measuring the surface roughness of said silicon wafer at several points;
- and
- c. multiplying a predetermined correlation factor to said surface roughness measurements to determine the OSF density of said silicon wafer at said measurement points.
1 more element
Dependencies are inferred from the claim text.