Method for forming a contact during the formation of a semiconductor device

A method used during the formation of a semiconductor device comprising the following steps:

• providing a semiconductor substrate assembly comprising at least first and second conductive lines each having a sidewall;
• forming a first blanket dielectric layer over said sidewalls of said first and second conductive lines;
• forming first and second conductive spacers between said first and second conductive lines;
• depositing and planarizing a second blanket dielectric layer over said spacers and said first dielectric layer;
• etching said second blanket dielectric layer to form an opening therein and a substantially vertical sidewall, wherein said conductive spacers are exposed at said opening;
• and
• subsequent to said step of etching said second blanket dielectric layer, etching said conductive spacers.

A method used during the formation of a semiconductor device comprising the following steps:

• providing a semiconductor substrate assembly;
• forming at least one conductive spacer over said semiconductor substrate assembly;
• depositing and planarizing a dielectric layer over said conductive spacer;
• etching said dielectric layer to form a sidewall from said dielectric layer and to expose said conductive layer;
• and
• subsequent to forming said sidewall from said dielectric layer, etching said conductive spacer to form first and second conductive spacer ends, wherein said etch recesses said first and second ends within said dielectric layer.

A semiconductor device comprising:

• a semiconductor substrate assembly;
• at least one conductive spacer having first and second ends, wherein said spacer overlies said semiconductor substrate assembly;
• and
• a dielectric layer overlying said conductive spacer,
• wherein said first and second ends of said spacer are recessed within said dielectric layer and said conductive spacer does not contact any other conductive layer.