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AssigneeHughes Electronics Corporation
InventorsDebabani Choudhury, James A. Foschaar, Phillip H. Lawyer, David B. Rensch
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A low cost highly integrated method of fabricating a heat sink on the backside of a power semiconductor device maintains device performance, improves thermal transfer, and enables reliable planar connections without having to dice the wafer or package the discrete device-heat sink assembly. An etch stop layer is formed between the wafer and the frontside power devices to protect them during backside processing and to reduce the contact resistance between the device and its heat sink. The heat sinks are formed by thinning, patterning and then plating the wafer in such a manner that the devices can be released without dicing. The heat sinks are preferably oversized so that a vacuum tool can grasp the heat sink from above without damaging the device and then compression bond the heat sink onto a planar microstrip circuit assembly, which is designed and packaged to facilitate easy replacement of failed devices.
A diode assembly, comprising:
A planar microstrip circuit assembly, comprising:
The planar microstrip circuit assembly, comprising a plurality of said end blocks with respective diode assemblies compression bonded thereto that are slideably engaged to the end of said circuit block with one said block being aligned with and its Gunn diode rebonded to said microstrip circuit.
Dependencies are inferred from the claim text.