Integrated inductor device and method for fabricating the same
AssigneeElectronics and Telecommunications Research Institute
InventorsMin Park, Hyun-Kyu Yu, Cheon-Soo Kim, Chung-Hwan Kim, Dae-Yong Kim
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Abstract
A method for fabricating an inductor device includes the steps of forming a plurality of trenches in a substrate by selectively etching the substrate, implanting dopants into sidewalls and bottom portion of each trench, forming an oxide layer by oxidizing the trenches and the substrate and simultaneously forming a doped layer in the surroundings of the trenches by diffusing the dopants into the substrate, and forming a dielectric layer on a resultant structure to fill the entrance of the trenches, thereby forming air-gap layers inside the trenches, thereby reducing a parasitic capacitance and a magnetic coupling.
Claims3
An integrated inductor device which is formed by integrating an inductor on a substrate, comprising:
- plurality of trench structures formed in a substrate;
- dielectric layer formed on the resultant structure wherein entrances of the trench structure are filled to form air gaps between each of the trench structures and the dielectric layer;
- doped layer formed in the surroundings of the trench structures;
- contact hole for exposing the doped layer;
- an electrode for connecting to the doped layer through the contact hole;
- and
- a metal line formed on an upper portion of the trench structures, wherein a length direction of each trench is perpendicular to a width direction of a corresponding portion of the metal line.
Dependencies are inferred from the claim text.