Semiconductor processing methods of forming a contact opening

A semiconductor processing method of forming an interlayer connection comprising:

• forming a first layer comprising conductive material over a semiconductive substrate;
• forming a second layer comprising an insulative dielectric material over the first layer;
• forming a third layer comprising conductive material over the second layer;
• forming a multi-level layer comprising photoresist masking material atop the third layer, the multi-level masking material layer defining a mask opening through which a contact opening to the first layer is to be etched, the multi-level masking material layer comprising an elevationally thicker first masking material layer immediately laterally adjacent the mask opening than a second masking material layer which is formed laterally outward of the first masking material layer;
• etching portions of the second and third layers through the mask opening in the multi-level masking material layer elevationally over and downwardly to and exposing at least some of the first layer material to define the contact opening thereto;
• removing at least some of the second masking material layer to outwardly expose underlying third layer material, at least some of the first masking material layer remaining in place over associated third layer material;
• etching exposed third layer material inwardly to underlying second layer dielectric material, the etching exposing at least some of the second layer dielectric material;
• forming a conductive polysilicon layer over the substrate and to within the contact opening, the conductive polysilicon layer overlying etched third layer material and adjacent second layer dielectric material and electrically interconnecting the third layer material and the exposed first layer material;
• and
• etching the conductive polysilicon layer laterally adjacent the etched third layer material to define an outer conductive component which is in electrical communication with the first layer material.

A semiconductor processing method of forming an opening, comprising:

• forming a multi-level layer comprising masking material atop an electrically conductive material, the multi-level layer defining a mask opening extending to and exposing the conductive material, the multi-level layer further comprising a thicker portion of masking material defining the mask opening relative a thinner portion of masking material immediately adjacent the thicker portion;
• etching the electrically conductive material through the mask opening to form an opening which extends into the electrically conductive material;
• and
• after the etching of the electrically conductive material, forming a second conductive material within the opening.

A semiconductor processing method of forming an opening comprising:

• forming a multi-level layer comprising masking material atop a single-level layer of an electrically conductive substrate surface wherein the electrically conductive surface defines a surface of a previously formed layer, the multi-level layer defining a mask opening extending to and exposing the single-level layer of conductive substrate surface;
• etching the electrically conductive substrate through the mask opening in the multi-level layer to extend the opening to an elevationally lower substrate location;
• and
• after the etching of the substrate surface, forming conductive material within the opening to electrically connect the previously formed layer and the elevationally lower substrate location.

A semiconductor processing method of forming an opening comprising:

• forming a multi-level layer comprising masking material atop a single-level layer of an electrically conductive substrate surface, the multi-level layer defining a mask opening extending to and exposing the single-level layer of conductive substrate surface;
• etching the electrically conductive substrate through the mask opening in the multi-level layer to extend the opening to an elevationally lower substrate location;
• after the etching of the substrate surface, removing at least some of the masking material second layer to outwardly expose at least some of the electrically conductive substrate surface, the electrically conductive substrate surface defining a surface of a formed layer comprising conductive material;
• etching through at least some of the exposed electrically conductive substrate surface and into the formed layer;
• and
• forming conductive material within the opening and electrically connecting at least some of the formed layer and the elevationally lower substrate location.

A semiconductor processing method of forming an opening comprising:

• forming a multi-level layer comprising a single layer of masking material atop a single-level layer of an electrically conductive substrate surface, the multi-level layer defining a mask opening extending to and exposing the single-level layer of conductive substrate surface;
• etching the electrically conductive substrate through the mask opening in the multi-level layer to extend the opening to an elevationally lower substrate location;
• and
• wherein the electrically conductive surface defines a surface of a previously formed layer comprising conductive material and further comprising after the etching of the substrate surface, forming conductive material within the opening to electrically connect the previously formed layer and the elevationally lower substrate location.

A semiconductor processing method of forming an opening comprising:

• forming a multi-level layer comprising a single layer of masking material atop a single-level layer of an electrically conductive substrate surface, the multi-level layer defining a mask opening extending to and exposing the single-level layer of conductive substrate surface;
• etching the electrically conductive substrate through the mask opening in the multi-level layer to extend the opening to an elevationally lower substrate location;
• after the etching of the substrate surface, removing at least some of the masking material second layer to outwardly expose at least some of the electrically conductive substrate surface, the electrically conductive substrate surface defining a surface of a formed layer comprising conductive material;
• etching through at least some of the exposed electrically conductive substrate surface and into the formed layer;
• and
• forming conductive material within the opening and electrically connecting at least some of the formed layer and the elevationally lower substrate location.