Method of fabricating conductive line structure
AssigneeUnited Microelectronics Corp.
InventorGary Hong
Life of this patent
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Abstract
A method of fabricating a conductive line structure. A first dielectric layer is formed on a substrate. A conductive layer is formed on the first dielectric layer. The conductive layer is patterned to form an opening in the conductive layer. The opening exposes a portion of the first dielectric layer. A conformal stop layer is formed over the substrate. The conformal stop layer is conformal to the conductive layer. An oxide layer is formed in the opening. The oxide layer does not completely fill the opening. A portion of a sidewall of the opening is exposed. A spacer is formed on the exposed sidewall of the opening. The oxide layer is removed. A second dielectric layer is formed over the substrate to fill the opening. A void is formed in the second dielectric layer in the opening.
Claims20
A method of fabricating a conductive line structure, comprising:
- forming a first dielectric layer on a substrate;
- forming a conductive layer on the first dielectric layer;
- patterning the conductive layer to form an opening in the conductive layer, wherein the opening exposes a portion of the first dielectric layer;
- forming a conformal stop layer over the substrate, wherein the conformal stop layer is conformal to the conductive layer;
- forming an oxide layer in the opening, wherein the oxide layer does not completely fill the opening and a portion of a sidewall of the opening is exposed;
- forming a spacer on the exposed sidewall of the opening;
- removing the oxide layer;
- and
- forming a second dielectric layer over the substrate to fill the opening, wherein a void is formed in the second dielectric layer in the opening.
A method of fabricating a conductive line structure, comprising:
- forming a first dielectric layer on a substrate;
- forming a conductive layer on the first dielectric layer;
- forming a covering layer on the conductive layer;
- patterning the conductive layer and the covering layer to form an opening, wherein the opening exposes the first dielectric layer;
- forming a conformal stop layer over the substrate, wherein the conformal stop layer is conformal to the conductive layer and the covering layer;
- forming an oxide layer in the opening, wherein the oxide layer does not completely fill the opening, and a portion of a sidewall of the opening is exposed;
- forming a spacer on the exposed sidewall of the opening;
- removing the oxide layer;
- and
- forming a second dielectric layer over the substrate to fill the opening, wherein a void is formed in the second dielectric layer in the opening.
A method of fabricating a conductive line structure, comprising:
- providing a dielectric layer;
- forming at least two conductive lines on the dielectric layer, wherein the conductive lines are spaced by an opening which exposes a part of the dielectric layer;
- forming a spacer on an upper part of a sidewall of the conductive lines within the opening while leaving a lower part of the sidewall of the conductive lines not covered by the spacer;
- and
- forming an oxide layer with a void to fill the opening.
Dependencies are inferred from the claim text.