Specialized metal profile for via landing areas
AssigneeAdvanced Micro Devices, Inc.
InventorJeffrey A. Shields
Life of this patent
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Abstract
A metal feature, defined by gaps in a patterned metal layer, is formed with an inwardly tapering profile so that it is wider at the top than at the bottom. The metal feature advantageously presents a larger landing area for vias while maintaining the dimensions and intraline coupling capacitance required by design. The gaps in the patterned metal layer can be filled with a spin-on dielectric material such as spin-on glass (SOG) or hydrogen silsesquioxane (HSQ).
Claims22
A method of manufacturing an interconnection structure in a semiconductor device, said method comprising:
- forming a first dielectric layer on a substrate;
- forming a patterned first metal layer having gaps on the first dielectric layer, wherein the patterned metal layer comprises a first metal feature having a top surface, a bottom surface, and side surfaces tapering inwardly from the top surface to the bottom surface;
- forming second dielectric layer on the patterned first metal layer;
- forming a through-hole in the second dielectric layer;
- filling the through-hole with a second metal layer;
- and
- forming a second metal feature on the second metal layer, said second metal feature being electrically connected to the first metal feature via the through-hole with the second metal layer.
A method of manufacturing a semiconductor device, said method comprising:
- forming a first dielectric layer on a substrate;
- forming a patterned metal layer having gaps on the first dielectric layer, wherein the patterned metal layer comprises a metal feature having a top surface, a bottom surface, and side surfaces tapering inwardly from the top surface to the bottom surface;
- and
- forming second dielectric layer on the patterned metal layer, wherein the patterned metal layer is formed by:
- depositing a lower metal layer;
- depositing an intermediate layer of aluminum or an aluminum alloy;
- depositing an upper anti-reflective coating;
- etching to pattern the metal layer forming a plurality of gaps;
- and
- filling the gaps with a dielectric material.
Dependencies are inferred from the claim text.