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US 6,274,466 B1Granted
Method of fabricating a semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsChung-Po Hsu, Ming-Chi Lin
Life of this patent
Estimating the term…
Abstract
A method for fabricating a semiconductor device to increase the effective concentration of a doped region. A first dopant is implanted into a substrate. A second dopant is implanted into the substrate. The first dopant has a lower diffusion coefficient, a higher energy gap, and a higher atomic mass than those of the second dopant.
Claims6
A method for preventing a freeze-out effect of indium atoms, comprising:
- in-situ implanting the indium atoms and a dopant in a substrate, wherein the dopant comprises atoms that have a lower energy gap and a lower atomic mass than those of the indium atoms.
Dependencies are inferred from the claim text.