Method for isolating semiconductor device
AssigneeHyundai Electronics Industries Co., Ltd.
InventorSu Jin Seo
Life of this patent
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Abstract
A method for isolating a semiconductor device is disclosed. The method includes the steps of forming a buffer film on a semiconductor substrate and an oxide prevention film on the buffer film, etching the buffer,film and the oxide prevention film of a device isolation region, etching the substrate using the oxide prevention film as a mask and forming a trench, forming an oxidizable film on the surface of the trench, forming an insulation film filled into the trench by oxidizing the oxidizable film, and removing the buffer film and the oxide prevention film, for thereby enhancing the isolation characteristic of the device.
Claims21
A method for isolating a semiconductor device, comprising:
- forming a buffer film on a semiconductor substrate and an oxide prevention film on the buffer film;
- etching the buffer film and the oxide prevention film at a device isolationregion;
- etching the substrate using the oxide prevention film as a mask to form a trench in the substrate;
- forming an oxidizable film on a surface of the trench, wherein said oxidizable film is formed of a silicon film, and further comprising doping the oxidizable film with a dopant selected from the group consisting of a P-type dopant and N-type dopant;
- forming an insulation film that fills the trench by oxidizing the oxidizable film;
- and
- removing the buffer film and the oxide prevention film.
A method for isolating a semiconductor device, comprising:
- forming a buffer film on a semiconductor substrate and an oxide prevention film on the buffer film;
- removing the buffer film and the oxide prevention film in a first trench region and a second trench region, wherein a width of the second trench region is greater than a width of the first trench region;
- forming a first trench and second trench in the substrate by etching the substrate using the oxide prevention film as a mask;
- forming a first oxidizable film in the first trench and a second oxidizable film in the second trench, wherein the second oxidizable film is thicker than the first oxidizable film;
- and
- forming a first insulation film and a second insulation film filling the first trench and the second trench, respectively, by oxidizing the oxidizable films.
A method for isolating a semiconductor device, comprising:
- forming a buffer film on a semiconductor substrate and an oxide prevention film on the buffer film;
- removing the buffer film and the oxide prevention film in a first trench region and a second trench region, wherein a width of the second trench region is greater than a width of the first trench region;
- forming a first trench and second trench in the substrate by etching the substrate using the oxide prevention film as a mask;
- forming a first oxidizable film in the first trench and a second oxidizable film in the second trench;
- and
- forming a first insulation film and a second insulation film filling the first trench and the second trench, respectively, by oxidizing the oxidizable films.
A method for isolating a semiconductor device, comprising:
- forming a buffer film on a semiconductor substrate and an oxide prevention film on the buffer film;
- removing the buffer film and the oxide prevention film in a first trench region and a second trench region;
- forming a first trench and second trench in the substrate by etching the substrate using the oxide prevention film as a mask;
- forming a first oxidizable film in the first trench and a second oxidizable film in the second trench, wherein the second oxidizable film is thicker than the first oxidizable film;
- and
- forming a first insulation film and a second insulation film filling the first trench and the second trench, respectively, by oxidizing the oxidizable films.
Dependencies are inferred from the claim text.