Method for fabricating dielectric capacitor

Abstract

Disclosed is a method for fabricating a dielectric capacitor that comprises a lower electrode made of at least one of Ir, Pd, Ru and Rh or containing at least one of those elements, a dielectric film of a ferroelectric or high dielectric substance as formed on the lower electrode, and an upper electrode as formed on the dielectric film. The method comprises a first heat treatment step for completing the formation of the dielectric film in an oxygen-containing vapor atmosphere followed by a second heat treatment step to be effected in a nitrogen or inert gas atmosphere at a temperature not lower than that for the first heat treatment. The method solves the problem with the dielectric layer of a ferroelectric substance of SBT or the like, of which the characteristics are worsened after forming gas annealing especially when the dielectric layer is formed on a lower electrode of a noble metal except platinum and gold.

Dependencies are inferred from the claim text.